|
Other articles related with "multi deposition multi annealing":
|
87304 |
Yanrong Wang(王艳蓉), Hong Yang(杨红), Hao Xu(徐昊), Weichun Luo(罗维春), Luwei Qi(祁路伟), Shuxiang Zhang(张淑祥), Wenwu Wang(王文武), Jiang Yan(闫江), Huilong Zhu(朱慧珑), Chao Zhao(赵超), Dapeng Chen(陈大鹏), Tianchun Ye(叶甜春) |
|
|
Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process |
|
|
|
Chin. Phys. B
2017 Vol.26 (8): 87304-087304
[Abstract]
(813)
[HTML 1 KB]
[PDF 1310 KB]
(238)
|
First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|